题目：Growth and characterization of Graphene and hexagona Boron Nitride

报告人：Dr Ravi Sundaram

时间地点：2014年10月16 日  9:00AM

                  信电大楼117室

报告人简介：2006- Bachelors in Metallurgical and Materials Engineering , Indian Institute of Technology Kharagpur

2008- Masters in Materials Science , EPFL, Switzerland, (Thesis: Electrochemical modification of Graphene)

2011- PhD in Physics , Max Planck Institute for Solid State Research (Prof Klaus Kern Group), Stuttgart and IBM T J Watson Centre, New York, (Dr Phaedon Avouris group) on electrical and optoelectronic properties of graphene.

2011-2014: Marie Curie Research Fellow at Cambridge University (Prof Ferrari group), worked on CVD graphene, optoelectronics of graphene and MoS2.

2014--current, Development Scientist leading the R&D towards graphene and 2d materials field.

Abstract: Chemical Vapour Deposition (CVD) has emerged as a workhorse for the production of graphene [1,2] and more recently applied in the synthesis of other 2D materials such as hexagonal Boron Nitride [3] and Molybdenum Disulphide [4].  In this talk, I will present an overview of our tool and process capabilities via CVD to synthesize graphene and hexagonal Boron Nitride (hBN) and plasma enhanced CVD techniques to synthesize nanocrystalline graphene(NCG) and vertically grown graphene. The synthesized structures were characterized using Scanning Electron Microscopy(SEM), Atomic Force Microscopy (AFM), Raman spectroscopy and X-ray Photoelectron Spectroscopy(XPS). The range of 2 dimensional nanostructures grown by this technique demonstrates the versatility of chemical vapour deposition based routes for the fabrication of these materials.